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Copper-cobalt heterobimetallic ceramic oxide thin film deposition: Synthesis, characterization and application of precursor


Reference:

Hamid, M., Tahir, A. A., Mazhar, M., Molloy, K. C. and Kociok-Kohn, G., 2008. Copper-cobalt heterobimetallic ceramic oxide thin film deposition: Synthesis, characterization and application of precursor. Inorganic Chemistry Communications, 11 (10), pp. 1159-1161.

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Official URL:

http://dx.doi.org/10.1016/j.inoche.2008.06.018

Abstract

Thin films of halide free Cu-Co mixed metal oxide have been prepared at 390 degrees C from the heterobimetallic complex Co-4(THF)(4)(TFA)(8)(mu-OH)(2)Cu-2(dmae)(2).0.5C(7)H(8) (1) [dmae=N,N-dimethylaminoethanol ((CH3)(2),NCH2CH2O-), TFA = triflouroacetate (CF3COO-), THIF = tetra hyd rofurane (C4H8O)] which was prepared by the reaction of [Cu(dmae)Cl](4) and Co(TFA)(2).4H(2)O. The precursor was characterized for its melting point, elemental composition, FTIR and X-ray single crystal structure determination. Thin films grown on glass substrate by using AACVID out of complex I were characterized by XRD and SEM. TGA and AACVD experiments reveal it to be a suitable precursor for the deposition of halide free Cu-Co mixedmetal oxide thin films at relatively low temperatures. (C) 2008 Elsevier B.V. All rights reserved.

Details

Item Type Articles
CreatorsHamid, M., Tahir, A. A., Mazhar, M., Molloy, K. C. and Kociok-Kohn, G.
DOI10.1016/j.inoche.2008.06.018
DepartmentsFaculty of Science > Chemistry
RefereedYes
StatusPublished
ID Code12092
Additional InformationID number: 000260549900015

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