Research

Polycrystalline silicon ion sensitive field effect transistors


Reference:

Yan, F., Estrela, P., Mo, Y., Migliorato, P., Maeda, H., Inoue, S. and Shimoda, T., 2005. Polycrystalline silicon ion sensitive field effect transistors. Applied Physics Letters, 86 (5), 053901.

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    Official URL:

    http://link.aip.org/link/?APPLAB/86/053901/1

    Abstract

    We report the operation of polycrystalline silicon ion sensitive field effect transistors. These devices can be fabricated on inexpensive disposable substrates such as glass or plastics and are, therefore, promising candidates for low cost single-use intelligent multisensors. In this work we have developed an extended gate structure with a Si3N4 sensing layer. Nearly ideal pH sensitivity (54 mV/pH) and stable operation have been achieved. Temperature effects have been characterized. A penicillin sensor has been fabricated by functionalizing the sensing area with penicillinase. The sensitivity to penicillin G is about 10 mV/mM, in solutions with concentration lower than the saturation value, which is about 7 mM. (C) 2005 American Institute of Physics.

    Details

    Item Type Articles
    CreatorsYan, F., Estrela, P., Mo, Y., Migliorato, P., Maeda, H., Inoue, S. and Shimoda, T.
    DOI10.1063/1.1854192
    DepartmentsFaculty of Engineering & Design > Electronic & Electrical Engineering
    Publisher StatementEstrela_APL_2005_86_053901.pdf: Copyright (2005) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (citation of published article) and may be found at http://link.aip.org/link/?APPLAB/86/053901/1
    RefereedYes
    StatusPublished
    ID Code12123
    Additional InformationID number: 000227144700059

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