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Nano-pendeo GaN growth of light emitting devices on silicon


Reference:

Wang, W. N., Liu, C., Gott, A., Denchitcharoen, S., Shields, P., Meshi, L., Khongphetsak, S., Griffiths, I., Cherns, D. and Campion, R., 2008. Nano-pendeo GaN growth of light emitting devices on silicon. Journal of Light and Visual Environment, 32 (2), pp. 187-190.

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Official URL:

http://dx.doi.org/10.2150/jlve.32.187

Abstract

This paper presents the results using an alternative defects and strain minimizing technique with nanostructures as the compliant layer to grow III-V nitrides onto foreign substrates. Defects reduction amd stress relaxation had been observed through HRTEM on GaN grown on sapphire and silicon. Results of LED devices on silicon with performance compatible with those on sapphire are presented.

Details

Item Type Articles
CreatorsWang, W. N., Liu, C., Gott, A., Denchitcharoen, S., Shields, P., Meshi, L., Khongphetsak, S., Griffiths, I., Cherns, D. and Campion, R.
DOI10.2150/jlve.32.187
Uncontrolled Keywordssapphire, light emitting diodes, corundum, light sources, gallium alloys, light emission, nitrides, nonmetals, semiconducting gallium, semiconducting silicon compounds, gallium nitride
DepartmentsFaculty of Engineering & Design > Electronic & Electrical Engineering
Faculty of Engineering & Design > Mechanical Engineering
Faculty of Science > Physics
Research CentresCentre for Advanced Sensor Technologies (CAST)
RefereedYes
StatusPublished
ID Code12634

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