Nano-pendeo GaN growth of light emitting devices on silicon
Wang, W. N., Liu, C., Gott, A., Denchitcharoen, S., Shields, P., Meshi, L., Khongphetsak, S., Griffiths, I., Cherns, D. and Campion, R., 2008. Nano-pendeo GaN growth of light emitting devices on silicon. Journal of Light and Visual Environment, 32 (2), pp. 187-190.
Related documents:This repository does not currently have the full-text of this item.
You may be able to access a copy if URLs are provided below. (Contact Author)
This paper presents the results using an alternative defects and strain minimizing technique with nanostructures as the compliant layer to grow III-V nitrides onto foreign substrates. Defects reduction amd stress relaxation had been observed through HRTEM on GaN grown on sapphire and silicon. Results of LED devices on silicon with performance compatible with those on sapphire are presented.
|Creators||Wang, W. N., Liu, C., Gott, A., Denchitcharoen, S., Shields, P., Meshi, L., Khongphetsak, S., Griffiths, I., Cherns, D. and Campion, R.|
|Uncontrolled Keywords||sapphire, light emitting diodes, corundum, light sources, gallium alloys, light emission, nitrides, nonmetals, semiconducting gallium, semiconducting silicon compounds, gallium nitride|
|Departments||Faculty of Engineering & Design > Electronic & Electrical Engineering|
Faculty of Engineering & Design > Mechanical Engineering
Faculty of Science > Physics
|Research Centres||Centre for Advanced Sensor Technologies (CAST)|
Actions (login required)