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Synthesis and characterization of Cu2ZnSnS4 absorber layers by an electrodeposition-annealing route


Reference:

Scragg, J. J., Dale, P. J. and Peter, L. M., 2009. Synthesis and characterization of Cu2ZnSnS4 absorber layers by an electrodeposition-annealing route. Thin Solid Films, 517 (7), pp. 2481-2484.

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Official URL:

http://dx.doi.org/10.1016/j.tsf.2008.11.022

Abstract

An electrodeposition-annealing route to films of the promising p-type absorber material Cu2ZnSnS4 (CZTS) using layered metal precursors is studied. The dependence of device performance on composition is investigated, and it is shown that a considerable Cu-deficiency is desirable to produce effective material, as measured by photoelectrochemical measurements employing the Eu3+/2+ redox couple. The differing effects of using elemental sulphur and H2S as sulphur sources during annealing are also studied, and it is demonstrated that H2S annealing results in films with improved crystallinity.

Details

Item Type Articles
CreatorsScragg, J. J., Dale, P. J. and Peter, L. M.
DOI10.1016/j.tsf.2008.11.022
Uncontrolled Keywordsphotovoltaics, cu2znsns4, czts, photoelectrochemistry, semiconductor, solar cell, kesterite
DepartmentsFaculty of Science > Chemistry
RefereedYes
StatusPublished
ID Code13930
Additional InformationSymposium on Thin Film Chalcogenide Photovoltaic Materials held at the EMRS 2008 Spring Conference. Strasbourg, France, 26-30 May 2008

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