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Wafer-scale transfer of nanoimprinted patterns into silicon substrates


Reference:

Hubbard, G., Abbott, S. J., Chen, Q., Allsopp, D. W. E., Wang, W. N., Bowen, C. R., Stevens, R., Satka, A., Hasko, D., Uherek, F. and Kovac, J., 2009. Wafer-scale transfer of nanoimprinted patterns into silicon substrates. Physica E-Low-Dimensional Systems & Nanostructures, 41 (6), pp. 1118-1121.

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Official URL:

http://dx.doi.org/10.1016/j.physe.2008.08.014

Abstract

A simple low cost method of nanoimprinting has been developed. The technique uses a flexible disposable master and lends itself to roll-to-roll processing. Residual layer thicknesses of 5-10 nm are routinely achieved. This enables the critical step of pattern transfer into hard substrates by reactive ion etching, an essential step in the fabrication of sub-wavelength photonic device elements on a wafer-scale.

Details

Item Type Articles
CreatorsHubbard, G., Abbott, S. J., Chen, Q., Allsopp, D. W. E., Wang, W. N., Bowen, C. R., Stevens, R., Satka, A., Hasko, D., Uherek, F. and Kovac, J.
DOI10.1016/j.physe.2008.08.014
Uncontrolled Keywordssilicon, pattern transfer, nanoimprinting
DepartmentsFaculty of Engineering & Design > Mechanical Engineering
Faculty of Engineering & Design > Electronic & Electrical Engineering
Research CentresCentre for Advanced Sensor Technologies (CAST)
Materials Research Centre
RefereedYes
StatusPublished
ID Code14710
Additional InformationProceedings paper from the Spring Meeting of the European-Materials-Research-Society on Frontiers in Silicon-Based Photonics. Strasbourg, France, 26-29 May, 2008

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