Wafer-scale transfer of nanoimprinted patterns into silicon substrates
Hubbard, G., Abbott, S. J., Chen, Q., Allsopp, D. W. E., Wang, W. N., Bowen, C. R., Stevens, R., Satka, A., Hasko, D., Uherek, F. and Kovac, J., 2009. Wafer-scale transfer of nanoimprinted patterns into silicon substrates. Physica E-Low-Dimensional Systems & Nanostructures, 41 (6), pp. 1118-1121.
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A simple low cost method of nanoimprinting has been developed. The technique uses a flexible disposable master and lends itself to roll-to-roll processing. Residual layer thicknesses of 5-10 nm are routinely achieved. This enables the critical step of pattern transfer into hard substrates by reactive ion etching, an essential step in the fabrication of sub-wavelength photonic device elements on a wafer-scale.
|Creators||Hubbard, G., Abbott, S. J., Chen, Q., Allsopp, D. W. E., Wang, W. N., Bowen, C. R., Stevens, R., Satka, A., Hasko, D., Uherek, F. and Kovac, J.|
|Uncontrolled Keywords||silicon, pattern transfer, nanoimprinting|
|Departments||Faculty of Engineering & Design > Mechanical Engineering|
Faculty of Engineering & Design > Electronic & Electrical Engineering
|Research Centres||Centre for Advanced Sensor Technologies (CAST)|
Materials Research Centre
|Additional Information||Proceedings paper from the Spring Meeting of the European-Materials-Research-Society on Frontiers in Silicon-Based Photonics. Strasbourg, France, 26-29 May, 2008|
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