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Strong-field terahertz optical sideband generation for wavelength conversion in asymmetric double quantum wells


Reference:

Zhang, J. Z. and Allsopp, D., 2009. Strong-field terahertz optical sideband generation for wavelength conversion in asymmetric double quantum wells. Applied Physics Letters, 95 (23), 231916.

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    Official URL:

    http://dx.doi.org/10.1063/1.3273392

    Abstract

    Terahertz (THz) optical sideband generation in asymmetric double quantum wells in strong THz fields is studied theoretically. Both monotonic THz-power dependence and saturation of the first-order sideband intensity can occur, depending on the near infrared (NIR) and THz photon energies. In both respects the calculated sideband intensity behavior agrees with experimental findings (Appl. Phys. Lett. 75, 2728 (1999); Phys. Rev. B 70, 115312 (2004)]. The nonmonotonic THz-power dependence and saturation of the sideband intensity are due to the excitonic Stark splitting. While the sideband saturation imposes limitations on the wavelength conversion efficiency, the simultaneous broadening of sideband resonances benefits wavelength conversion by increasing the number of NIR frequencies available for wavelength conversion. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3273392]

    Details

    Item Type Articles
    CreatorsZhang, J. Z.and Allsopp, D.
    DOI10.1063/1.3273392
    DepartmentsFaculty of Engineering & Design > Electronic & Electrical Engineering
    Research CentresCentre for Advanced Sensor Technologies (CAST)
    Publisher Statementzhang09aplpostprint.pdf: Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 95 (23), article number 231916 and may be found at: http://dx.doi.org/10.1063/1.3273392
    RefereedYes
    StatusPublished
    ID Code17483

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