Research

Enhancement of phosphorus activation in vacancy engineered thin silicon-on-insulator substrates


Reference:

Smith, A. J., Gwilliam, R. M., Stolojan, V., Knights, A. P., Coleman, P. G., Kallis, A. and Yeong, S. H., 2009. Enhancement of phosphorus activation in vacancy engineered thin silicon-on-insulator substrates. Journal of Applied Physics, 106 (10), 103514.

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Official URL:

http://dx.doi.org/10.1063/1.3262527

Details

Item Type Articles
CreatorsSmith, A. J., Gwilliam, R. M., Stolojan, V., Knights, A. P., Coleman, P. G., Kallis, A. and Yeong, S. H.
DOI10.1063/1.3262527
DepartmentsFaculty of Science > Physics
RefereedYes
StatusPublished
ID Code17504

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