Enhancement of phosphorus activation in vacancy engineered thin silicon-on-insulator substrates
Reference:
Smith, A. J., Gwilliam, R. M., Stolojan, V., Knights, A. P., Coleman, P. G., Kallis, A. and Yeong, S. H., 2009. Enhancement of phosphorus activation in vacancy engineered thin silicon-on-insulator substrates. Journal of Applied Physics, 106 (10), 103514.
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Official URL:
http://dx.doi.org/10.1063/1.3262527
Details
| Item Type | Articles |
| Creators | Smith, A. J., Gwilliam, R. M., Stolojan, V., Knights, A. P., Coleman, P. G., Kallis, A. and Yeong, S. H. |
| DOI | 10.1063/1.3262527 |
| Departments | Faculty of Science > Physics |
| Refereed | Yes |
| Status | Published |
| ID Code | 17504 |
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