Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting

Reference:

Liu, C., Satka, A., Jagadamma, L. K., Edwards, P. R., Allsopp, D., Martin, R. W., Shields, P., Kovac, J., Uherek, F. and Wang, W. N., 2009. Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting. Applied Physics Express, 2 (12), 121002.

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Official URL:

http://dx.doi.org/10.1143/APEX.2.121002

Abstract

InxGa1-xN/GaN quantum wells have been grown on the {10 (1) over bar1} facets of dense arrays of self-assembled GaN nano-pyramids formed by selective area growth and characterised by high spatial resolution cathodoluminescence. The pyramids are shown to have significantly reduced defect (green-yellow) band emission and the quantum well luminescence is correspondingly intense. The peak energy of this luminescence is shown to blue-shift as the sampled region is moved up the pyramid facets, revealing that InN incorporation in such closely spaced epitaxial nanostructures differs from that in widely spaced micron-size pyramidal structures decreasing rather than increasing towards the nano-pyramid tips. (C) 2009 The Japan Society of Applied Physics DOI: 10.1143/APEX.2.121002

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