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Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting


Reference:

Liu, C., Satka, A., Jagadamma, L. K., Edwards, P. R., Allsopp, D., Martin, R. W., Shields, P., Kovac, J., Uherek, F. and Wang, W. N., 2009. Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting. Applied Physics Express, 2 (12), 121002.

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Official URL:

http://dx.doi.org/10.1143/APEX.2.121002

Abstract

InxGa1-xN/GaN quantum wells have been grown on the {10 (1) over bar1} facets of dense arrays of self-assembled GaN nano-pyramids formed by selective area growth and characterised by high spatial resolution cathodoluminescence. The pyramids are shown to have significantly reduced defect (green-yellow) band emission and the quantum well luminescence is correspondingly intense. The peak energy of this luminescence is shown to blue-shift as the sampled region is moved up the pyramid facets, revealing that InN incorporation in such closely spaced epitaxial nanostructures differs from that in widely spaced micron-size pyramidal structures decreasing rather than increasing towards the nano-pyramid tips. (C) 2009 The Japan Society of Applied Physics DOI: 10.1143/APEX.2.121002

Details

Item Type Articles
CreatorsLiu, C., Satka, A., Jagadamma, L. K., Edwards, P. R., Allsopp, D., Martin, R. W., Shields, P., Kovac, J., Uherek, F. and Wang, W. N.
DOI10.1143/APEX.2.121002
DepartmentsFaculty of Engineering & Design > Mechanical Engineering
Faculty of Engineering & Design > Electronic & Electrical Engineering
Research CentresCentre for Advanced Sensor Technologies (CAST)
RefereedYes
StatusPublished
ID Code17650

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