Research

Shallow defects in Cu2ZnSnS4


Reference:

Hönes, K., Zscherpel, E., Scragg, J. and Siebentritt, S., 2009. Shallow defects in Cu2ZnSnS4. Physica B Condensed Matter, 404 (23-24), pp. 4949-4952.

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Official URL:

http://dx.doi.org/10.1016/j.physb.2009.08.206

Abstract

Cu2SnZnS4 is a promising candidate for thin film solar cells with absorbers made of non-toxic and abundant elements. So far very little effort has been put into understanding the basic material properties. We investigate vapour phase grown Cu2SnZnS4 crystals by temperature and intensity dependent photoluminescence measurements. We observe for the first time narrow photoluminescence peaks, which allow us to determine defect levels and to propose a defect recombination model for Cu2SnZnS4. Assuming an exciton binding energy of 10 meV, we find an energy gap of 1.519 eV at 10K. From the observed DA transitions we derive the energies of two shallow acceptor states 10 +/- 5 and 30 +/- 5 meV above the valence band and one shallow donor state 5 +/- 3 meV below the conduction band.

Details

Item Type Articles
CreatorsHönes, K., Zscherpel, E., Scragg, J. and Siebentritt, S.
DOI10.1016/j.physb.2009.08.206
Uncontrolled Keywordskesterites, defects, photoluminescence spectroscopy
DepartmentsFaculty of Science > Chemistry
RefereedYes
StatusPublished
ID Code18631
Additional Information25th International Conference on Defects in Semiconductors July 20-24, 2009. St Petersburg, Russia

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