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GaN devices based on nanorods


Reference:

Cherns, D., Meshi, L., Griffiths, I., Khongphetsak, S., Novikov, S. V., Campion, R. P., Foxon, C. T., Liu, C., Shields, P. and Wang, W., 2010. GaN devices based on nanorods. Journal of Physics: Conference Series, 209 (1), 012001.

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Official URL:

http://dx.doi.org/10.1088/1742-6596/209/1/012001

Abstract

Transmission and scanning electron microscopy are used to examine the role of an intermediate nanorod layer in reducing threading defect densities in GaN/(0001)sapphire. Films grown by molecular beam epitaxy under N-rich conditions showed Ga-polar nanorods growing out of a more compact N-polar layer. The nanorods sometimes contained extended threading defects, which were faulted dipoles lying on {10-10} planes with a displacement vector of 1/2[0001], which act as sources for spiral growth. By overgrowing the nanorods under Ga-rich conditions, continuous epilayers were formed with threading defect densities down to 108 cm-2. In a second approach, nanorods produced by etching through a self-organised layer of Ni islands were overgrown by metal-organic chemical vapour deposition, to produce overlayers with defect densities down to 5*107 cm-2. In both cases, the mechanisms by which the nanorod layer reduces the threading defect density are identified.

Details

Item Type Articles
CreatorsCherns, D., Meshi, L., Griffiths, I., Khongphetsak, S., Novikov, S. V., Campion, R. P., Foxon, C. T., Liu, C., Shields, P. and Wang, W.
DOI10.1088/1742-6596/209/1/012001
Uncontrolled Keywordsthreading defects, displacement vectors, ga-rich conditions, self-organised, rich conditions, polar layers, overlayers, nanorod layers, metal-organic, spiral growth, chemical vapour deposition
DepartmentsFaculty of Engineering & Design > Electronic & Electrical Engineering
Faculty of Engineering & Design > Mechanical Engineering
Research CentresCentre for Advanced Sensor Technologies (CAST)
RefereedYes
StatusPublished
ID Code18694
Additional Information16th International Conference on Microscopy of Semiconducting Materials 17–20 March 2009, University of Oxford, United Kingdom

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