GaN devices based on nanorods

Reference:

Cherns, D., Meshi, L., Griffiths, I., Khongphetsak, S., Novikov, S. V., Campion, R. P., Foxon, C. T., Liu, C., Shields, P. and Wang, W., 2010. GaN devices based on nanorods. Journal of Physics: Conference Series, 209 (1), 012001.

Related documents:

Official URL:

http://dx.doi.org/10.1088/1742-6596/209/1/012001

Abstract

Transmission and scanning electron microscopy are used to examine the role of an intermediate nanorod layer in reducing threading defect densities in GaN/(0001)sapphire. Films grown by molecular beam epitaxy under N-rich conditions showed Ga-polar nanorods growing out of a more compact N-polar layer. The nanorods sometimes contained extended threading defects, which were faulted dipoles lying on {10-10} planes with a displacement vector of 1/2[0001], which act as sources for spiral growth. By overgrowing the nanorods under Ga-rich conditions, continuous epilayers were formed with threading defect densities down to 108 cm-2. In a second approach, nanorods produced by etching through a self-organised layer of Ni islands were overgrown by metal-organic chemical vapour deposition, to produce overlayers with defect densities down to 5*107 cm-2. In both cases, the mechanisms by which the nanorod layer reduces the threading defect density are identified.

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