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The reduction of threading dislocations in GaN using a GaN nanocolumn interlayer


Reference:

Meshi, L., Cherns, D., Griffiths, I., Khongphetsak, S., Gott, A., Liu, C., Denchitcharoen, S., Shields, P., Wang, W. N., Campion, R., Novikov, S. and Foxon, T., 2008. The reduction of threading dislocations in GaN using a GaN nanocolumn interlayer. Physica Status Solidi (C) Current Topics in Solid State Physics, 5 (6), pp. 1645-1647.

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Official URL:

http://dx.doi.org/10.1002/pssc.200778562

Abstract

Epitaxial lateral overgrowth (ELO) has been used to reduce threading dislocation (TD) densities in GaN. This paper reports transmission and scanning electron microscopy studies of TDs in GaN films grown by ELO on GaN nanocolumns produced either during growth by MBE (method 1), or by self-organised patterning on a uniform layer grown by MOCVD (method 2). In method 1, isolated nanocolumns grew without TDs, but some TDs formed when nanocolumns coalesced. Although some of these TDs extended through the overlayer, extensive lateral migration of others, depending on the dislocation type, led to dislocation annihilation, lowering the overall TD density. In method 2, a similar process of lateral migration of TDs was observed during ELO, resulting in a continuous GaN overlayer with TD densities less than 108 cm-2.

Details

Item Type Articles
CreatorsMeshi, L., Cherns, D., Griffiths, I., Khongphetsak, S., Gott, A., Liu, C., Denchitcharoen, S., Shields, P., Wang, W. N., Campion, R., Novikov, S. and Foxon, T.
DOI10.1002/pssc.200778562
DepartmentsFaculty of Engineering & Design > Mechanical Engineering
Faculty of Engineering & Design > Electronic & Electrical Engineering
Faculty of Science > Physics
Research CentresCentre for Advanced Sensor Technologies (CAST)
RefereedYes
StatusPublished
ID Code18829
Additional Information7th International Conference of Nitride Semiconductors, ICNS-7. 16-21 September 2007. Las Vegas, United States.

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