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Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device


Reference:

Gong, Y., Tapajna, M., Bakalova, S., Zhang, Y., Edgar, J. H., Dudley, M., Hopkins, M. and Kuball, M., 2010. Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device. Applied Physics Letters, 96 (22), 223506.

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Official URL:

http://dx.doi.org/10.1063/1.3443712

Abstract

B12As2/SiC pn heterojunction diodes based on the radiation-hard B12As2 deposited on (0001) n-type 4H-SiC via chemical vapor deposition were demonstrated. The diodes exhibit good rectifying behavior with an ideality factor of 1.8 and a leakage current as low as 9.4 x 10(-6) A/cm(2). Capacitance-voltage measurements using a two-frequency technique showed a hole concentration of similar to 1.8-2.0 x 10(17) cm(-3) in B12As2 with a slight increase near the interface due to the presence of an interfacial layer to accommodate lattice mismatch. Band offsets between the B12As2 and SiC were estimated to be similar to 1.06 eV and 1.12 eV for conduction band and valance band, respectively.

Details

Item Type Articles
CreatorsGong, Y., Tapajna, M., Bakalova, S., Zhang, Y., Edgar, J. H., Dudley, M., Hopkins, M. and Kuball, M.
DOI10.1063/1.3443712
DepartmentsFaculty of Engineering & Design > Electronic & Electrical Engineering
RefereedYes
StatusPublished
ID Code19348

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