Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device
Gong, Y., Tapajna, M., Bakalova, S., Zhang, Y., Edgar, J. H., Dudley, M., Hopkins, M. and Kuball, M., 2010. Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device. Applied Physics Letters, 96 (22), 223506.
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B12As2/SiC pn heterojunction diodes based on the radiation-hard B12As2 deposited on (0001) n-type 4H-SiC via chemical vapor deposition were demonstrated. The diodes exhibit good rectifying behavior with an ideality factor of 1.8 and a leakage current as low as 9.4 x 10(-6) A/cm(2). Capacitance-voltage measurements using a two-frequency technique showed a hole concentration of similar to 1.8-2.0 x 10(17) cm(-3) in B12As2 with a slight increase near the interface due to the presence of an interfacial layer to accommodate lattice mismatch. Band offsets between the B12As2 and SiC were estimated to be similar to 1.06 eV and 1.12 eV for conduction band and valance band, respectively.
|Creators||Gong, Y., Tapajna, M., Bakalova, S., Zhang, Y., Edgar, J. H., Dudley, M., Hopkins, M. and Kuball, M.|
|Departments||Faculty of Engineering & Design > Electronic & Electrical Engineering|
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