CuInSe2 precursor films electro-deposited directly onto MoSe2

Reference:

Cummings, C., Zoppi, G., Forbes, I., Dale, P. J., Scragg, J. J., Peter, L. M., Kociok-Kohn, G. and Marken, F., 2010. CuInSe2 precursor films electro-deposited directly onto MoSe2. Journal of Electroanalytical Chemistry, 645 (1), pp. 16-21.

Related documents:

Official URL:

http://dx.doi.org/10.1016/j.jelechem.2010.03.031

Abstract

Mo/MoSe2 thin film electrodes formed by selenisation of molybdenum are investigated as chemically robust substrates for the electro-deposition of InCu precursor layers for CuInSe2 (CISe) solar cell absorber films. Exposure of molybdenum films to selenium vapour at 550 degrees C produces thin and chemically robust heterostructures of Mo/MoSe2. These films exhibit the characteristics of a degenerate semi-conductor and provide close to metallic electrical conductivity for electro-deposition processes in both acidic and alkaline aqueous media. The Mo/MoSe2 films are characterised by cyclic voltammetry for the reduction of Ru(NH3)(6)(3) in aqueous 0.1 M KCl, for the reduction of 0.1 M In3+ in aqueous 0.5 M LiCl pH 3, and for the reduction of 0.1 M Cu2+ in aqueous 3 M NaOH with 0.2 M n-sorbitol. In all three cases well-defined and reversible voltammetric responses are observed. For the formation of CISe films initially In3+ is deposited potentiostatically followed by electro-deposition of Cu2+ and selenisation at 550 degrees C in selenium vapour. Mechanically stable CISe films are produced and preliminary photo-electrochemical data demonstrate the effects of changing the stoichiometry.

Export

Actions (login required)