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Porosity dependence of the acoustic longitudinal velocity in heavily doped P++ porous silicon layers


Reference:

Aliev, G. N., Goller, B., Kovalev, D. and Snow, P., 2009. Porosity dependence of the acoustic longitudinal velocity in heavily doped P++ porous silicon layers. Physica Status Solidi (C), 6 (7), pp. 1670-1674.

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Official URL:

http://dx.doi.org/10.1002/pssc.200881102

Abstract

The longitudinal acoustic velocity for 1 GHz waves propagating along the 100 direction in p(++) porous silicon layers has been measured using an acoustic wave transmission technique. The velocities obtained are significantly higher than those previously observed for p(+) samples. The porosity dependence is measured to be V-L = 8.43 (1 - P)(0.58) km/s, where V-L is longitudinal velocity and P is porosity. The low value of the exponent (0.58) is an indication of a relatively well-ordered pore structure.

Details

Item Type Articles
CreatorsAliev, G. N., Goller, B., Kovalev, D. and Snow, P.
DOI10.1002/pssc.200881102
DepartmentsFaculty of Science > Physics
Research CentresCentre for Photonics and Photonic Materials
RefereedYes
StatusPublished
ID Code20228
Additional Information6th International Conference on Porous Semiconductors Science and Technology. 10-14 March 2008. Mallorca, Spain.

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