Research

High electric field forming of a-Si:H p-i-n diodes


Reference:

Equer, B. and Ilie, A., 1995. High electric field forming of a-Si:H p-i-n diodes. Journal of Non-Crystalline Solids, 190 (1-2), 67 - 73.

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Official URL:

http://dx.doi.org/10.1016/0022-3093(95)00258-8

Abstract

A metastable evolution of a-Si:H p-i-n diodes submitted to a high reverse bias for a long period of time was observed. This forming process leads to a significant decrease of the reverse current and increase of the breakdown voltage. The mechanisms underlying this forming process have been investigated using the constant photocurrent method experiment. The effects of annealing and current-induced defect creation have been studied. The forming process is found to be most consistent with a metastable increase in the dopant activation, leading to an improvement of the p-layer blocking efficiency.

Details

Item Type Articles
CreatorsEquer, B.and Ilie, A.
DOI10.1016/0022-3093(95)00258-8
DepartmentsFaculty of Science > Physics
RefereedYes
StatusPublished
ID Code21400

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