Leakage current studies of thick a-Si:H detectors under high electric field conditions

Reference:

Ilie, A., Equer, B. and Pochet, T., 1996. Leakage current studies of thick a-Si:H detectors under high electric field conditions. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment, 380 (1-2), 18 - 22.

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Official URL:

http://dx.doi.org/10.1016/S0168-9002(96)00291-4

Abstract

The leakage current of thick (up to 20 μm) a-Si:H p-i-n diodes developed for nuclear radiation detection were investigated. Performing current-voltage measurements at different temperatures and over a large electric field domain (up to 106 V/cm), different leakage current mechanisms, such as electron injection and field enhanced thermal generation, have been identified. The influence of the p layer thickness on the electronic injection was clearly demonstrated by means of spectral response experiments. The effect of a device forming procedure on the leakage current and on the noise power spectra of the devices has also been studied.

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