Research

Leakage current studies of thick a-Si:H detectors under high electric field conditions


Reference:

Ilie, A., Equer, B. and Pochet, T., 1996. Leakage current studies of thick a-Si:H detectors under high electric field conditions. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment, 380 (1-2), 18 - 22.

Related documents:

This repository does not currently have the full-text of this item.
You may be able to access a copy if URLs are provided below.

Official URL:

http://dx.doi.org/10.1016/S0168-9002(96)00291-4

Abstract

The leakage current of thick (up to 20 μm) a-Si:H p-i-n diodes developed for nuclear radiation detection were investigated. Performing current-voltage measurements at different temperatures and over a large electric field domain (up to 106 V/cm), different leakage current mechanisms, such as electron injection and field enhanced thermal generation, have been identified. The influence of the p layer thickness on the electronic injection was clearly demonstrated by means of spectral response experiments. The effect of a device forming procedure on the leakage current and on the noise power spectra of the devices has also been studied.

Details

Item Type Articles
CreatorsIlie, A., Equer, B. and Pochet, T.
DOI10.1016/S0168-9002(96)00291-4
DepartmentsFaculty of Science > Physics
RefereedYes
StatusPublished
ID Code21402

Export

Actions (login required)

View Item