High electric field effects on the thermal generation in hydrogenated amorphous silicon
Ilie, A. and Equer, B., 1997. High electric field effects on the thermal generation in hydrogenated amorphous silicon. MRS Proceedings, 467, 185 - 190.
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We have studied the electric field dependence of the electron-hole thermal generation process in hydrogenated amorphous silicon. A model was developed which takes into account the Poole-Frenkel effect and the thermally assisted tunneling. In order to explain the experimental results it was necessary to consider a strong electron-lattice interaction describing the carrier tunneling mechanism. Deep defects relaxation is also discussed.
|Creators||Ilie, A.and Equer, B.|
|Departments||Faculty of Science > Physics|
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