Research

High electric field effects on the thermal generation in hydrogenated amorphous silicon


Reference:

Ilie, A. and Equer, B., 1997. High electric field effects on the thermal generation in hydrogenated amorphous silicon. MRS Proceedings, 467, 185 - 190.

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Abstract

We have studied the electric field dependence of the electron-hole thermal generation process in hydrogenated amorphous silicon. A model was developed which takes into account the Poole-Frenkel effect and the thermally assisted tunneling. In order to explain the experimental results it was necessary to consider a strong electron-lattice interaction describing the carrier tunneling mechanism. Deep defects relaxation is also discussed.

Details

Item Type Articles
CreatorsIlie, A.and Equer, B.
DepartmentsFaculty of Science > Physics
RefereedYes
StatusPublished
ID Code21403

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