High electric field effects on the thermal generation in hydrogenated amorphous silicon

Reference:

Ilie, A. and Equer, B., 1997. High electric field effects on the thermal generation in hydrogenated amorphous silicon. MRS Proceedings, 467, 185 - 190.

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Official URL:

http://www.mrs.org/s_mrs/sec_subscribe.asp?CID=12272&DID=239839&action=detail

Abstract

We have studied the electric field dependence of the electron-hole thermal generation process in hydrogenated amorphous silicon. A model was developed which takes into account the Poole-Frenkel effect and the thermally assisted tunneling. In order to explain the experimental results it was necessary to consider a strong electron-lattice interaction describing the carrier tunneling mechanism. Deep defects relaxation is also discussed.

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