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Characterization of tetrahedrally bonded amorphous carbon via capacitance techniques


Reference:

Palinginis, K., Ilie, A., Kleinsorge, B., Milne, W. and Cohen, J., 1998. Characterization of tetrahedrally bonded amorphous carbon via capacitance techniques. MRS Proceedings, 508, pp. 197-202.

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Abstract

We report the results of junction capacitance measurements on thin tetrahedral amorphous carbon (ta-C) films to deduce their defect densities. We find defect densities in the range 3 -7 x 1017 cm"3 in the undoped ta-C films, and roughly an order of magnitude larger in the nitrogen doped (n-type) films. In some cases fairly uniform defect profiles were obtained covering a thickness of a couple of hundreds angstroems. We also observed a thermal activation process of carriers from defect states at the ta-C/c-Si interface with an activation energy in the range of 0.4eV to 0.5eV.

Details

Item Type Articles
CreatorsPalinginis, K., Ilie, A., Kleinsorge, B., Milne, W. and Cohen, J.
DepartmentsFaculty of Science > Physics
RefereedYes
StatusPublished
ID Code21416

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