Characterization of tetrahedrally bonded amorphous carbon via capacitance techniques
Palinginis, K., Ilie, A., Kleinsorge, B., Milne, W. and Cohen, J., 1998. Characterization of tetrahedrally bonded amorphous carbon via capacitance techniques. MRS Proceedings, 508, pp. 197-202.
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We report the results of junction capacitance measurements on thin tetrahedral amorphous carbon (ta-C) films to deduce their defect densities. We find defect densities in the range 3 -7 x 1017 cm"3 in the undoped ta-C films, and roughly an order of magnitude larger in the nitrogen doped (n-type) films. In some cases fairly uniform defect profiles were obtained covering a thickness of a couple of hundreds angstroems. We also observed a thermal activation process of carriers from defect states at the ta-C/c-Si interface with an activation energy in the range of 0.4eV to 0.5eV.
|Creators||Palinginis, K., Ilie, A., Kleinsorge, B., Milne, W. and Cohen, J.|
|Departments||Faculty of Science > Physics|
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