Defect densities in tetrahedrally bonded amorphous carbon deduced by junction capacitance techniques
Palinginis, K., Lubianiker, Y., Cohen, J., Ilie, A., Kleinsorge, B. and Milne, W., 1999. Defect densities in tetrahedrally bonded amorphous carbon deduced by junction capacitance techniques. Applied Physics Letters, 74 (3), 371 - 373.
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Junction capacitance measurements performed on tetrahedrally bonded amorphous carbon (ta-C)/crystalline-Si (c-Si) heterostructures are used to deduce the defect density in thin ta-C films. Using the drive level capacitance profiling technique, we determine a homogeneous defect density of 6±1.5×1017 cm−3 in the undoped (p-type) ta-C films and one order of magnitude larger in the nitrogen-doped (n-type) films. Admittance measurements reveal defect states at the ta-C/c-Si interface with a density exceeding 2×1012 cm−2
|Creators||Palinginis, K., Lubianiker, Y., Cohen, J., Ilie, A., Kleinsorge, B. and Milne, W.|
|Departments||Faculty of Science > Physics|
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