Characterization of new A-Si:H detectors fabricated from amorphous silicon deposited at high rate by helium enhanced PECVD
Reference:
Pochet, T., Ilie, A., Foulon, F. and Equer, B., 1993. Characterization of new A-Si:H detectors fabricated from amorphous silicon deposited at high rate by helium enhanced PECVD. In: Nuclear Science Symposium and Medical Imaging Conference, 1993. IEEE, pp. 450-454.
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Official URL:
http://dx.doi.org/10.1109/NSSMIC.1993.701702
Details
| Item Type | Book Sections |
| Creators | Pochet, T., Ilie, A., Foulon, F. and Equer, B. |
| DOI | 10.1109/NSSMIC.1993.701702 |
| Departments | Faculty of Science > Physics |
| Status | Published |
| ID Code | 21419 |
| Additional Information | Nuclear Science Symposium and Medical Imaging Conference, 31 October - 6 November 1993, |
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