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Characterization of new A-Si:H detectors fabricated from amorphous silicon deposited at high rate by helium enhanced PECVD


Reference:

Pochet, T., Ilie, A., Foulon, F. and Equer, B., 1993. Characterization of new A-Si:H detectors fabricated from amorphous silicon deposited at high rate by helium enhanced PECVD. IEEE, pp. 450-454.

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Details

Item Type Conference or Workshop Items (UNSPECIFIED)
CreatorsPochet, T., Ilie, A., Foulon, F. and Equer, B.
DOI10.1109/NSSMIC.1993.701702
DepartmentsFaculty of Science > Physics
StatusPublished
ID Code21419
Additional InformationNuclear Science Symposium and Medical Imaging Conference, 31 October - 6 November 1993,

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