Modification of silicon waveguide structures using ion implantation induced defects

Reference:

Knights, A., Dudeck, K., Walters, W. and Coleman, P., 2008. Modification of silicon waveguide structures using ion implantation induced defects. Applied Surface Science, 255 (1), pp. 75-77.

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Official URL:

http://dx.doi.org/10.1016/j.apsusc.2008.05.167

Abstract

The structure of re-crystallized silicon films is investigated using transmission electron microscopy, spectroscopic ellipsometry and positron annihilation spectroscopy. Samples were prepared via amorphization of the silicon overlayer of silicon-on-insulator substrates, and subsequent thermal annealing. For an annealing temperature of 650 °C we show that the silicon film has a poly-crystalline structure. Its refractive index measured at 1550 nm is comparable to that of crystalline silicon following re-crystallization at 750 °C. Positron measurements indicate a high concentration of open-volume point defects in the re-crystallized films. We discuss the potential importance of these structures with regard to defect engineering for silicon photonic devices.

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