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Modification of silicon waveguide structures using ion implantation induced defects


Reference:

Knights, A., Dudeck, K., Walters, W. and Coleman, P., 2008. Modification of silicon waveguide structures using ion implantation induced defects. Applied Surface Science, 255 (1), pp. 75-77.

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Official URL:

http://dx.doi.org/10.1016/j.apsusc.2008.05.167

Abstract

The structure of re-crystallized silicon films is investigated using transmission electron microscopy, spectroscopic ellipsometry and positron annihilation spectroscopy. Samples were prepared via amorphization of the silicon overlayer of silicon-on-insulator substrates, and subsequent thermal annealing. For an annealing temperature of 650 °C we show that the silicon film has a poly-crystalline structure. Its refractive index measured at 1550 nm is comparable to that of crystalline silicon following re-crystallization at 750 °C. Positron measurements indicate a high concentration of open-volume point defects in the re-crystallized films. We discuss the potential importance of these structures with regard to defect engineering for silicon photonic devices.

Details

Item Type Articles
CreatorsKnights, A., Dudeck, K., Walters, W. and Coleman, P.
DOI10.1016/j.apsusc.2008.05.167
DepartmentsFaculty of Science > Physics
RefereedYes
StatusPublished
ID Code21725

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