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Separately contacted monocrystalline silicon double-layer structure with an amorphous silicon dioxide barrier made by wafer bonding


Reference:

Takashina, K., Nagase, M., Nishiguchi, K., Ono, Y., Omi, H., Fujiwara, A., Fujisawa, T. and Muraki, K., 2010. Separately contacted monocrystalline silicon double-layer structure with an amorphous silicon dioxide barrier made by wafer bonding. Semiconductor Science and Technology, 25 (12), 125001.

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    Official URL:

    http://dx.doi.org/10.1088/0268-1242/25/12/125001

    Abstract

    A double layer of monocrystalline silicon separated by a 23.5 nm silicon dioxide barrier is fabricated by bonding two silicon-on-insulator wafers with oxidized surface layers. The two layers are separately contacted allowing transport measurements through individual layers and a bias voltage to be applied between the layers. Four-terminal magnetotransport measurements at cryogenic temperatures on electrons generated close to the central oxide barrier show reasonable mobility

    Details

    Item Type Articles
    CreatorsTakashina, K., Nagase, M., Nishiguchi, K., Ono, Y., Omi, H., Fujiwara, A., Fujisawa, T. and Muraki, K.
    DOI10.1088/0268-1242/25/12/125001
    DepartmentsFaculty of Science > Physics
    Publisher StatementDQWSST-OPUS.pdf: The definitive version is available as: Takashina, K., Nagase, M., Nishiguchi, K., Ono, Y., Omi, H., Fujiwara, A., Fujisawa, T. and Muraki, K., 2010. Separately contacted monocrystalline silicon double-layer structure with an amorphous silicon dioxide barrier made by wafer bonding. Semiconductor Science and Technology, 25 (12), 125001. Available from: http://dx.doi.org/10.1088/0268-1242/25/12/125001
    RefereedYes
    StatusPublished
    ID Code23415

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