Separately contacted monocrystalline silicon double-layer structure with an amorphous silicon dioxide barrier made by wafer bonding
Reference:
Takashina, K., Nagase, M., Nishiguchi, K., Ono, Y., Omi, H., Fujiwara, A., Fujisawa, T. and Muraki, K., 2010. Separately contacted monocrystalline silicon double-layer structure with an amorphous silicon dioxide barrier made by wafer bonding. Semiconductor Science and Technology, 25 (12), 125001.
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Official URL:
http://dx.doi.org/10.1088/0268-1242/25/12/125001
Abstract
A double layer of monocrystalline silicon separated by a 23.5 nm silicon dioxide barrier is fabricated by bonding two silicon-on-insulator wafers with oxidized surface layers. The two layers are separately contacted allowing transport measurements through individual layers and a bias voltage to be applied between the layers. Four-terminal magnetotransport measurements at cryogenic temperatures on electrons generated close to the central oxide barrier show reasonable mobility
Details
| Item Type | Articles |
| Creators | Takashina, K., Nagase, M., Nishiguchi, K., Ono, Y., Omi, H., Fujiwara, A., Fujisawa, T. and Muraki, K. |
| DOI | 10.1088/0268-1242/25/12/125001 |
| Departments | Faculty of Science > Physics |
| Publisher Statement | DQWSST-OPUS.pdf: The definitive version is available as: Takashina, K., Nagase, M., Nishiguchi, K., Ono, Y., Omi, H., Fujiwara, A., Fujisawa, T. and Muraki, K., 2010. Separately contacted monocrystalline silicon double-layer structure with an amorphous silicon dioxide barrier made by wafer bonding. Semiconductor Science and Technology, 25 (12), 125001. Available from: http://dx.doi.org/10.1088/0268-1242/25/12/125001 |
| Refereed | Yes |
| Status | Published |
| ID Code | 23415 |
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