Electron hopping rate measurements in ITO junctions: Charge diffusion in a layer-by-layer deposited ruthenium(II)-bis(benzimidazolyl)pyridine-phosphonate-TiO2 film

Reference:

Cummings, C. Y., Wadhawan, J. D., Nakabayashi, T., Haga, M.-a., Rassaei, L., Dale, S. E. C., Bending, S., Pumera, M., Parker, S. C. and Marken, F., 2011. Electron hopping rate measurements in ITO junctions: Charge diffusion in a layer-by-layer deposited ruthenium(II)-bis(benzimidazolyl)pyridine-phosphonate-TiO2 film. Journal of Electroanalytical Chemistry, 657 (1-2), pp. 196-201.

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Official URL:

http://dx.doi.org/10.1016/j.jelechem.2011.04.010

Abstract

Focused ion beam (FIB) machining allowed a sub-micron trench to be cut through tin-doped indium oxide (ITO) film on glass to give a generator - collector junction electrode with narrow gap (ca. 600 nm). A layer-by-layer deposited film composed of a dinuclear ruthenium(II)-bis(benzimidazolyl)pyridine-phosphonate (as the negative component) and nanoparticulate TiO2 (ca. 6 nm diameter, as the positive component) was formed and investigated first on simple ITO electrodes and then on ITO junction electrodes. The charge transport within this film due to Ru(II/III) redox switching (electron hopping) was investigated and an apparent diffusion coefficient of ca. D app = 2 ( 1) 10-15 m2 s-1 was observed with minimal contributions from intra-molecular Ru-Ru interactions. The benefits of FIB-cut ITO junctions as a tool in determining charge hopping rates are highlighted. 2011 Elsevier B.V. All rights reserved.

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