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Microscopic origins of electron and hole stability in ZnO


Reference:

Catlow, C. R. A., Sokol, A. A. and Walsh, A., 2011. Microscopic origins of electron and hole stability in ZnO. Chemical Communications, 47 (12), pp. 3386-3388.

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Official URL:

http://dx.doi.org/10.1039/c1cc10314h

Abstract

We present a fundamental method to assess the doping limits of hetero-polar materials; applied to the case of ZnO, we show clearly that electrons are stable and holes are unstable under the limits of thermodynamic control.

Details

Item Type Articles
CreatorsCatlow, C. R. A., Sokol, A. A. and Walsh, A.
DOI10.1039/c1cc10314h
Uncontrolled Keywordscrystals, zinc-oxide, hydrogen, thin-films, semiconductors, n-type, defects
DepartmentsFaculty of Science > Chemistry
RefereedYes
StatusPublished
ID Code23969

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