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Defect physics of the kesterite thin-film solar cell absorber Cu(2)ZnSnS(4)


Reference:

Chen, S. Y., Gong, X. G., Walsh, A. and Wei, S. H., 2010. Defect physics of the kesterite thin-film solar cell absorber Cu(2)ZnSnS(4). Applied Physics Letters, 96 (2), 021902.

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Official URL:

http://dx.doi.org/10.1063/1.3275796

Abstract

Cu(2)ZnSnS(4) is one of the most promising quaternary absorber materials for thin-film solar cells. Examination of the thermodynamic stability of this quaternary compound reveals that the stable chemical potential region for the formation of stoichiometric compound is small. Under these conditions, the dominant defect will be p-type Cu(Zn) antisite, which has an acceptor level deeper than the Cu vacancy. The dominant self-compensated defect pair in this quaternary compound is [Cu(Zn)(-)+Zn(Cu)(+)](0), which leads to the formation of various polytype structures of Cu(2)ZnSnS(4). We propose that to maximize the solar cell performance, growth of Cu(2)ZnSnS(4) under Cu-poor/Zn-rich conditions will be optimal, if the precipitation of ZnS can be avoided by kinetic barriers.

Details

Item Type Articles
CreatorsChen, S. Y., Gong, X. G., Walsh, A. and Wei, S. H.
DOI10.1063/1.3275796
Uncontrolled Keywordsimpurity states, antisite defects, thin film devices, photovoltaics, surfaces, crystal structure, cuinse2, vacancies (crystal), zinc compounds, nanocrystals, precipitation, solar cells, ternary semiconductors, copper compounds, stoichiometry, thermodynamics
DepartmentsFaculty of Science > Chemistry
RefereedYes
StatusPublished
ID Code23982

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