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Structure, stability and work functions of the low index surfaces of pure indium oxide and Sn-doped indium oxide (ITO) from density functional theory


Reference:

Walsh, A. and Catlow, C. R. A., 2010. Structure, stability and work functions of the low index surfaces of pure indium oxide and Sn-doped indium oxide (ITO) from density functional theory. Journal of Materials Chemistry, 20 (46), pp. 10438-10444.

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Official URL:

http://dx.doi.org/10.1039/c0jm01816c

Abstract

Indium sesquioxide is a transparent conducting oxide material widely used in photovoltaic and solid-state lighting devices. We report a study of the surface properties of the thermodynamically stable bixbyite phase of In(2)O(3) using density functional theory. The surface energies follow the order gamma(100) > gamma(110) > gamma(111), with the charge neutral (111) termination being the lowest energy cleavage plane. The surface work functions (vertical ionisation potentials) are calculated using a non-local hybrid density functional, and show good agreement with recent experimental measurements. Finally, SnO(2) doping of the (111) surface is presented, where the Sn substitutions are more favourable on the surface sites and the excess electrons are delocalised amongst the In(2)O(3) conduction states; the enthalpy of solution is estimated to be 60 kJ mol(-1).

Details

Item Type Articles
CreatorsWalsh, A.and Catlow, C. R. A.
DOI10.1039/c0jm01816c
Uncontrolled Keywordsoxygen-vacancies, electrical-properties, chemistry, in2o3, transparent conducting oxides, band-gaps, crystal-surfaces, augmented-wave method, exchange, energy
DepartmentsFaculty of Science > Chemistry
RefereedYes
StatusPublished
ID Code23984

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