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Acceptor Levels in p-Type Cu2O: Rationalizing Theory and Experiment


Reference:

Scanlon, D., Morgan, B., Watson, G. and Walsh, A., 2009. Acceptor Levels in p-Type Cu2O: Rationalizing Theory and Experiment. Physical Review Letters, 103 (9), 096405.

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Official URL:

http://dx.doi.org/10.1103/PhysRevLett.103.096405

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Abstract

Understanding conduction in Cu2O is vital to the optimization of Cu-based p-type transparent conducting oxides. Using a screened hybrid–density-functional approach we have investigated the formation of p-type defects in Cu2O giving rise to single-particle levels that are deep in the band gap, consistent with experimentally observed activated, polaronic conduction. Our calculated transition levels for simple and split copper vacancies explain the source of the two distinct hole states seen in DLTS experiments. The necessity of techniques that go beyond the present generalized-gradient- and local-density-approximation techniques for accurately describing p-type defects in Cu(I)-based oxides is discussed.

Details

Item Type Articles
CreatorsScanlon, D., Morgan, B., Watson, G. and Walsh, A.
DOI10.1103/PhysRevLett.103.096405
Related URLs
URLURL Type
http://www.scopus.com/inward/record.url?scp=69449108364&partnerID=8YFLogxKUNSPECIFIED
Uncontrolled Keywordscuprous-oxide, oxygen vacancies, doped cu2o, transport, single-crystal, thin-films, copper oxides, defect, electrical-conductivity, mechanisms, ab-initio
DepartmentsFaculty of Science > Chemistry
Research CentresCentre for Sustainable Chemical Technologies
RefereedYes
StatusPublished
ID Code23992

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