Origins of band-gap renormalization in degenerately doped semiconductors


Walsh, A., Da Silva, J. L. F. and Wei, S. H., 2008. Origins of band-gap renormalization in degenerately doped semiconductors. Physical Review B, 78 (7), 075211.

Related documents:

This repository does not currently have the full-text of this item.
You may be able to access a copy if URLs are provided below. (Contact Author)

Official URL:

Related URLs:


Degenerate n-type doping of semiconductors results in optical band-gap widening through occupation of the conduction band, which is partially offset by the so-called band-gap renormalization. From investigation of the magnitude and origin of these shifts through density-functional band-structure theory, we demonstrate that the key contribution to renormalization arises from the nonparabolic nature of the host conduction band but not the rigid shift of the band edges, as is the current paradigm. Furthermore, the carrier dependence of the band-gap widening is highly sensitive to the electronic states of the dopant ion, which can be involved in a significant reconstruction of the lower conduction band.


Item Type Articles
CreatorsWalsh, A., Da Silva, J. L. F. and Wei, S. H.
Related URLs
Uncontrolled Keywordssno2,wave basis-set,optical-properties,in2o3,state,total-energy calculations
DepartmentsFaculty of Science > Chemistry
ID Code24011


Actions (login required)

View Item