Impact of valley polarization on the resistivity in two dimensions
Reference:
Takashina, K., Niida, Y., Renard, V. T., Fujiwara, A., Fujisawa, T., Muraki, K. and Hirayama, Y., 2011. Impact of valley polarization on the resistivity in two dimensions. Physical Review Letters, 106 (19), 196403.
Related documents:
![[img]](http://opus.bath.ac.uk/style/images/fileicons/application_pdf.png)
| PDF (Takashina_PRL_2011_106_19_196403.pdf) - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader Download (3084kB) | Preview |
Official URL:
http://dx.doi.org/10.1103/PhysRevLett.106.196403
Abstract
We examine the temperature dependence of resistivity in a two-dimensional electron system formed in a silicon-on-insulator quantum well. The device allows us to tune the valley splitting continuously in addition to the electron density. Our data provide a global picture of how the resistivity and its temperature dependence change with valley polarization. At the boundary between valley-polarized and partially polarized regions, we demonstrate that there is an insulating contribution from spin-degenerate electrons occupying the upper valley-subband edge.
Details
| Item Type | Articles |
| Creators | Takashina, K., Niida, Y., Renard, V. T., Fujiwara, A., Fujisawa, T., Muraki, K. and Hirayama, Y. |
| DOI | 10.1103/PhysRevLett.106.196403 |
| Departments | Faculty of Science > Physics |
| Publisher Statement | Takashina_PRL_2011_106_19_196403.pdf: Takashina, K., Niida, Y., Renard, V. T., Fujiwara, A., Fujisawa, T., Muraki, K. and Hirayama, Y., 2011. Impact of Valley Polarization on the Resistivity in Two Dimensions. Physical Review Letters, 106 (19), 196403. Copyright (2011) by the American Physical Society. |
| Refereed | Yes |
| Status | Published |
| ID Code | 24054 |
Export
Actions (login required)
| View Item |
