Research

Impact of valley polarization on the resistivity in two dimensions


Reference:

Takashina, K., Niida, Y., Renard, V. T., Fujiwara, A., Fujisawa, T., Muraki, K. and Hirayama, Y., 2011. Impact of valley polarization on the resistivity in two dimensions. Physical Review Letters, 106 (19), 196403.

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    Official URL:

    http://dx.doi.org/10.1103/PhysRevLett.106.196403

    Abstract

    We examine the temperature dependence of resistivity in a two-dimensional electron system formed in a silicon-on-insulator quantum well. The device allows us to tune the valley splitting continuously in addition to the electron density. Our data provide a global picture of how the resistivity and its temperature dependence change with valley polarization. At the boundary between valley-polarized and partially polarized regions, we demonstrate that there is an insulating contribution from spin-degenerate electrons occupying the upper valley-subband edge.

    Details

    Item Type Articles
    CreatorsTakashina, K., Niida, Y., Renard, V. T., Fujiwara, A., Fujisawa, T., Muraki, K. and Hirayama, Y.
    DOI10.1103/PhysRevLett.106.196403
    DepartmentsFaculty of Science > Physics
    Publisher StatementTakashina_PRL_2011_106_19_196403.pdf: Takashina, K., Niida, Y., Renard, V. T., Fujiwara, A., Fujisawa, T., Muraki, K. and Hirayama, Y., 2011. Impact of Valley Polarization on the Resistivity in Two Dimensions. Physical Review Letters, 106 (19), 196403. Copyright (2011) by the American Physical Society.
    RefereedYes
    StatusPublished
    ID Code24054

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