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Nanoimprint lithography resist profile inversion for lift-off applications


Reference:

Shields, P. A. and Allsopp, D. W. E., 2011. Nanoimprint lithography resist profile inversion for lift-off applications. Microelectronic Engineering, 88 (9), pp. 3011-3014.

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    Official URL:

    http://dx.doi.org/10.1016/j.mee.2011.04.063

    Abstract

    A method is described in which the tapered features that are inherent to nanoimprint lithography are inverted to allow successful lift-off. A mold of the relief is created by in-filling the imprinted resist with hydrogen silsesquioxane (HSQ) before selectively removing the resist with O2 plasma. Nanoscale etch masks have been created by lift-off from the negative HSQ profile and used to create high-aspect-ratio structures in materials that are hard to plasma etch.

    Details

    Item Type Articles
    CreatorsShields, P. A.and Allsopp, D. W. E.
    DOI10.1016/j.mee.2011.04.063
    DepartmentsFaculty of Engineering & Design > Electronic & Electrical Engineering
    Publisher StatementShields_MicroelecEng_2011.pdf: NOTICE: this is the author’s version of a work that was accepted for publication in Microelectronic Engineering. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Microelectronic Engineering, Vol 88, Issue 9, 2011, DOI 10.1016/j.mee.2011.04.063
    RefereedYes
    StatusPublished
    ID Code24154

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