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Surface oxygen vacancy origin of electron accumulation in indium oxide


Reference:

Walsh, A., 2011. Surface oxygen vacancy origin of electron accumulation in indium oxide. Applied Physics Letters, 98 (26), 261910.

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    Official URL:

    http://dx.doi.org/10.1063/1.3604811

    Abstract

    Metal oxides are typically insulating materials that can be made conductive through aliovalent doping and/or non-stoichiometry. Recent studies have identified conductive states at surfaces and interfaces of pure oxide materials; high electron concentrations are present, resulting in a high-mobility two-dimensional electron gas. We demonstrate for In(2)O(3) that the energy required to form an oxygen vacancy decreases rapidly towards the (111) surface, where the coordination environment is lowered. This is a general feature of metal oxide systems that can result in a metal-insulator transition where donors are produced at chemically reduced extended defects.

    Details

    Item Type Articles
    CreatorsWalsh, A.
    DOI10.1063/1.3604811
    DepartmentsFaculty of Science > Chemistry
    Research CentresCentre for Sustainable Chemical Technologies
    Publisher StatementWalsh_APL_2011_98_261910.pdf: Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. This article appeared in Walsh, A., 2011. Surface oxygen vacancy origin of electron accumulation in indium oxide. Applied Physics Letters, 98 (26), 261910 and may be found at http://dx.doi.org/10.1063/1.3604811
    RefereedYes
    StatusPublished
    ID Code24977

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