Spin splitting of upper electron subbands in a SiO2/Si(100)/SiO2 quantum well with in-plane magnetic field

Reference:

Niida, Y., Takashina, K., Fujiwara, A., Fujisawa, T. and Hirayama, Y., 2009. Spin splitting of upper electron subbands in a SiO2/Si(100)/SiO2 quantum well with in-plane magnetic field. Applied Physics Letters, 94 (14), 142101.

Official URL:

http://dx.doi.org/10.1063/1.3105987

Abstract

We observe a lifting of the twofold spin degeneracy of conduction-band electrons in an upper-valley subband with in-plane magnetic field in a SiO2/Si(100)/SiO2 quantum well, which is manifest in a splitting of a feature in the conductivity accompanying the occupation of the upper-valley subband. The splitting increases in proportion to the in-plane magnetic field, allowing the product of the effective g-factor and effective mass g∗m∗ to be obtained. The value remains constant over wide ranges of valley splitting, total electron density, and potential bias

Details

Item Type	Articles
Creators	Niida, Y., Takashina, K., Fujiwara, A., Fujisawa, T. and Hirayama, Y.
DOI	10.1063/1.3105987
Departments	Faculty of Science > Physics
Publisher Statement	APL94_2009_Takashina_et_al.pdf: ©2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Niida, Y., Takashina, K., Fujiwara, A., Fujisawa, T. and Hirayama, Y., 2009. Spin splitting of upper electron subbands in a SiO2/Si(100)/SiO2 quantum well with in-plane magnetic field. Applied Physics Letters, 94 (14), 142101, and may be found at http://dx.doi.org/10.1063/1.3105987.
Refereed	Yes
Status	Published
ID Code	25963

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