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Spin splitting of upper electron subbands in a SiO2/Si(100)/SiO2 quantum well with in-plane magnetic field


Reference:

Niida, Y., Takashina, K., Fujiwara, A., Fujisawa, T. and Hirayama, Y., 2009. Spin splitting of upper electron subbands in a SiO2/Si(100)/SiO2 quantum well with in-plane magnetic field. Applied Physics Letters, 94 (14), 142101.

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    Official URL:

    http://dx.doi.org/10.1063/1.3105987

    Abstract

    We observe a lifting of the twofold spin degeneracy of conduction-band electrons in an upper-valley subband with in-plane magnetic field in a SiO2/Si(100)/SiO2 quantum well, which is manifest in a splitting of a feature in the conductivity accompanying the occupation of the upper-valley subband. The splitting increases in proportion to the in-plane magnetic field, allowing the product of the effective g-factor and effective mass g∗m∗ to be obtained. The value remains constant over wide ranges of valley splitting, total electron density, and potential bias

    Details

    Item Type Articles
    CreatorsNiida, Y., Takashina, K., Fujiwara, A., Fujisawa, T. and Hirayama, Y.
    DOI10.1063/1.3105987
    DepartmentsFaculty of Science > Physics
    Publisher StatementAPL94_2009_Takashina_et_al.pdf: ©2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Niida, Y., Takashina, K., Fujiwara, A., Fujisawa, T. and Hirayama, Y., 2009. Spin splitting of upper electron subbands in a SiO2/Si(100)/SiO2 quantum well with in-plane magnetic field. Applied Physics Letters, 94 (14), 142101, and may be found at http://dx.doi.org/10.1063/1.3105987.
    RefereedYes
    StatusPublished
    ID Code25963

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