Electrons and holes in a 40 nm thick silicon slab at cryogenic temperatures
Reference:
Takashina, K., Nishiguchi, K., Ono, Y., Fujiwara, A., Fujisawa, T., Hirayama, Y. and Muraki, K., 2009. Electrons and holes in a 40 nm thick silicon slab at cryogenic temperatures. Applied Physics Letters, 94 (14), 142104.
Related documents:
![[img]](http://opus.bath.ac.uk/style/images/fileicons/application_pdf.png)
| PDF (Takashina_APL_2009_94_142014.pdf) - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader Download (6MB) | Preview |
Official URL:
http://dx.doi.org/10.1063/1.3112602
Abstract
We demonstrate low temperature operation of an electron-hole bilayer device based on a 40 nm thick layer of silicon in which electrons and holes can be simultaneously induced and contacted independently. The device allows the application of bias between the electrons and holes enhancing controllability over density and confining potential. We confirm that drag measurements are possible with the structure.
Details
| Item Type | Articles |
| Creators | Takashina, K., Nishiguchi, K., Ono, Y., Fujiwara, A., Fujisawa, T., Hirayama, Y. and Muraki, K. |
| DOI | 10.1063/1.3112602 |
| Departments | Faculty of Science > Physics |
| Publisher Statement | Takashina_APL_2009_94_142014.pdf: Copyright (2009) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Takashina, K., Nishiguchi, K., Ono, Y., Fujiwara, A., Fujisawa, T., Hirayama, Y. and Muraki, K., 2009. Electrons and holes in a 40 nm thick silicon slab at cryogenic temperatures. Applied Physics Letters, 94 (14), 142104 and may be found at http://dx.doi.org/10.1063/1.3112602 |
| Refereed | Yes |
| Status | Published |
| ID Code | 25964 |
Export
Actions (login required)
| View Item |
