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Electrons and holes in a 40 nm thick silicon slab at cryogenic temperatures


Reference:

Takashina, K., Nishiguchi, K., Ono, Y., Fujiwara, A., Fujisawa, T., Hirayama, Y. and Muraki, K., 2009. Electrons and holes in a 40 nm thick silicon slab at cryogenic temperatures. Applied Physics Letters, 94 (14), 142104.

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    Official URL:

    http://dx.doi.org/10.1063/1.3112602

    Abstract

    We demonstrate low temperature operation of an electron-hole bilayer device based on a 40 nm thick layer of silicon in which electrons and holes can be simultaneously induced and contacted independently. The device allows the application of bias between the electrons and holes enhancing controllability over density and confining potential. We confirm that drag measurements are possible with the structure.

    Details

    Item Type Articles
    CreatorsTakashina, K., Nishiguchi, K., Ono, Y., Fujiwara, A., Fujisawa, T., Hirayama, Y. and Muraki, K.
    DOI10.1063/1.3112602
    DepartmentsFaculty of Science > Physics
    Publisher StatementTakashina_APL_2009_94_142014.pdf: Copyright (2009) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Takashina, K., Nishiguchi, K., Ono, Y., Fujiwara, A., Fujisawa, T., Hirayama, Y. and Muraki, K., 2009. Electrons and holes in a 40 nm thick silicon slab at cryogenic temperatures. Applied Physics Letters, 94 (14), 142104 and may be found at http://dx.doi.org/10.1063/1.3112602
    RefereedYes
    StatusPublished
    ID Code25964

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