Negative magnetoresistance of a silicon 2deg under in-plane magnetic field due to spin-splitting of upper subbands

Reference:

Takashina, K., Niida, Y., Renard, V. T., Fujiwara, A., Fujisawa, T. and Hirayama, Y., 2009. Negative magnetoresistance of a silicon 2deg under in-plane magnetic field due to spin-splitting of upper subbands. International Journal of Modern Physics B, 23 (12 & 13), pp. 2938-2942.

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Official URL:

http://dx.doi.org/10.1142/S021797920906258X

Abstract

We examine the effect of an in-plane magnetic field on the resistance of a 2-dimensional electron system confined in a silicon quantum well when the Fermi energy is tuned through the upper valley-subband edge while the electrons are otherwise valley-polarized. In contrast to previous experiments on valley-degenerate systems which only showed positive magnetoresistance, when the Fermi energy is at or near the upper valley-subband edge, the magnetoresistance is found to show a distinct negative contribution which is interpreted as being due to spin polarization of the upper valley-subband.

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