Research

Pauli-spin-blockade transport through a silicon double quantum dot


Reference:

Liu, H. W., Fujisawa, T., Ono, Y., Inokawa, H., Fujiwara, A., Takashina, K. and Hirayama, Y., 2008. Pauli-spin-blockade transport through a silicon double quantum dot. Physical Review B, 77 (7), 073310.

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Official URL:

http://dx.doi.org/10.1103/PhysRevB.77.073310

Abstract

We present measurements of resonant tunneling through discrete energy levels of a silicon double quantum dot formed in a thin silicon-on-insulator layer. In the absence of piezoelectric phonon coupling, spontaneous phonon emission with deformation-potential coupling accounts for inelastic tunneling through the ground states of the two dots. Such transport measurements enable us to observe a Pauli spin blockade due to effective two-electron spin-triplet correlations, evident in a distinct bias-polarity dependence of resonant tunneling through the ground states. The blockade is lifted by the excited-state resonance by virtue of efficient phonon emission between the ground states. Our experiment demonstrates considerable potential for investigating silicon-based spin dynamics and spin-based quantum information processing.

Details

Item Type Articles
CreatorsLiu, H. W., Fujisawa, T., Ono, Y., Inokawa, H., Fujiwara, A., Takashina, K. and Hirayama, Y.
DOI10.1103/PhysRevB.77.073310
DepartmentsFaculty of Science > Physics
RefereedYes
StatusPublished
ID Code25966

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