Integrated Schottky structures for applications above 100 GHz
Reference:
Alderman, B., Sanghera, H., Thomas, B., Matheson, D., Maestrini, A., Wang, H., Treuttel, J., Siles, J., Davies, S. R. and Narhi, T., 2008. Integrated Schottky structures for applications above 100 GHz. In: 38th European Microwave Conference, 2008-10-27 - 2008-10-31, Amsterdam.
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Abstract
Recent developments in the fabrication of GaAs integrated Schottky structures for applications above 100 GHz are presented. Two approaches are discussed; the fabrication of integrated circuits using a GaAs foundry service, coupled with the research based post-processing of these structures, and the fabrication of discrete and integrated Schottky structures using a bespoke research laboratory.
Details
| Item Type | Conference or Workshop Items (Paper) |
| Creators | Alderman, B., Sanghera, H., Thomas, B., Matheson, D., Maestrini, A., Wang, H., Treuttel, J., Siles, J., Davies, S. R. and Narhi, T. |
| Departments | Faculty of Science > Physics |
| Refereed | Yes |
| Status | Published |
| ID Code | 26912 |
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