Modelling and optimisation of a sapphire/GaN-based diaphragm structure for pressure sensing in harsh environments

Reference:

Edwards, M. J., Vittoz, S., Amen, R., Rufer, L., Johander, P., Bowen, C. R. and Allsopp, D. W. E., 2010. Modelling and optimisation of a sapphire/GaN-based diaphragm structure for pressure sensing in harsh environments. In: Conference Proceedings - The 18th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010. Piscataway, NJ: IEEE Computer Society, pp. 127-130.

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Official URL:

http://dx.doi.org/10.1109/ASDAM.2010.5666320

Abstract

GaN is a potential sensor material for harsh environments due to its piezoelectric and mechanical properties. In this paper an 8mm diameter sensor structure is proposed based on a GaN / AlGaN / sapphire HEMT wafer. The discs will be glass-bonded to an alumina package, creating a 'drumskin' type sensor that is sensitive to pressure changes. The electromechanical behaviour of the sensor is studied in an attempt to optimise the design of a pressure sensor (HEMT position and sapphire thickness) for operation in the range of 10 - 50 bar (5 MPa) and above 300°C

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