Modelling and optimisation of a sapphire/GaN-based diaphragm structure for pressure sensing in harsh environments
Edwards, M. J., Vittoz, S., Amen, R., Rufer, L., Johander, P., Bowen, C. R. and Allsopp, D. W. E., 2010. Modelling and optimisation of a sapphire/GaN-based diaphragm structure for pressure sensing in harsh environments. Piscataway, NJ: IEEE Computer Society, pp. 127-130.
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GaN is a potential sensor material for harsh environments due to its piezoelectric and mechanical properties. In this paper an 8mm diameter sensor structure is proposed based on a GaN / AlGaN / sapphire HEMT wafer. The discs will be glass-bonded to an alumina package, creating a 'drumskin' type sensor that is sensitive to pressure changes. The electromechanical behaviour of the sensor is studied in an attempt to optimise the design of a pressure sensor (HEMT position and sapphire thickness) for operation in the range of 10 - 50 bar (5 MPa) and above 300°C
|Item Type||Conference or Workshop Items (UNSPECIFIED)|
|Creators||Edwards, M. J., Vittoz, S., Amen, R., Rufer, L., Johander, P., Bowen, C. R. and Allsopp, D. W. E.|
|Departments||Faculty of Engineering & Design > Electronic & Electrical Engineering|
Faculty of Engineering & Design > Mechanical Engineering
|Additional Information||18th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010, 25-27 October 2010, Smolenice, Slovakia.|
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