Research

Single-waveguide power-combined multipliers for next generation LO sources above 100 GHz


Reference:

Siles, J. V., Maestrini, A., Davies, S., Alderman, B. and Wang, H., 2010. Single-waveguide power-combined multipliers for next generation LO sources above 100 GHz. In: European Microwave Integrated Circuits Conference (EuMIC) 2010. IEEE Computer Society, pp. 234-237.

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Abstract

The next generation of local oscillator terahertz sources will demand novel and efficient power-combined frequency multiplier structures able to handle the increasing available power provided by state-of-the-art solid-state sources and amplifiers at W-band. In this paper, we give a brief overview of the different proposed alternatives and describe a new concept of frequency multiplier featuring two GaAs Schottky diode based MMIC chips on a single wave-guide structure. This scheme adds an extra symmetry to the multiplier circuit with respect to previously reported power-combined structures, increasing the power handling capabilities of frequency multipliers by an additional factor of two. GaAs foundry, post-processing, waveguide block micromachining and testing will be fully performed within the European Union.

Details

Item Type Book Sections
CreatorsSiles, J. V., Maestrini, A., Davies, S., Alderman, B. and Wang, H.
DepartmentsFaculty of Science > Physics
StatusPublished
ID Code27661
Additional Information13th European Microwave Week 2010: Connecting the World, EuMIC 2010. 26 September - 1 October 2010. Paris, France.

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