Single-waveguide power-combined multipliers for next generation LO sources above 100 GHz
Siles, J. V., Maestrini, A., Davies, S., Alderman, B. and Wang, H., 2010. Single-waveguide power-combined multipliers for next generation LO sources above 100 GHz. Piscataway, U. S. A.: IEEE Computer Society, pp. 234-237.
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The next generation of local oscillator terahertz sources will demand novel and efficient power-combined frequency multiplier structures able to handle the increasing available power provided by state-of-the-art solid-state sources and amplifiers at W-band. In this paper, we give a brief overview of the different proposed alternatives and describe a new concept of frequency multiplier featuring two GaAs Schottky diode based MMIC chips on a single wave-guide structure. This scheme adds an extra symmetry to the multiplier circuit with respect to previously reported power-combined structures, increasing the power handling capabilities of frequency multipliers by an additional factor of two. GaAs foundry, post-processing, waveguide block micromachining and testing will be fully performed within the European Union.
|Item Type||Conference or Workshop Items (UNSPECIFIED)|
|Creators||Siles, J. V., Maestrini, A., Davies, S., Alderman, B. and Wang, H.|
|Departments||Faculty of Science > Physics|
|Additional Information||13th European Microwave Week 2010: Connecting the World, EuMIC 2010. 26 September - 1 October 2010. Paris, France.|
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