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Defects in TiO 2 films on p +-Si studied by positron annihilation spectroscopy


Reference:

Coleman, P. G., Edwardson, C. J., Zhang, A., Ma, X., Pi, X. and Yang, D., 2012. Defects in TiO 2 films on p +-Si studied by positron annihilation spectroscopy. Materials Science & Engineering B - Solid State Materials for Advanced Technology, 177 (8), pp. 625-628.

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    Official URL:

    http://dx.doi.org/10.1016/j.mseb.2012.02.023

    Abstract

    Variable-energy positron annihilation spectroscopy has been applied to the study of defects in TiO 2/p +-Si structures, in the as-grown state and after annealing in vacuum and in hydrogen, to investigate whether annealing (and film thickness) resulted in an increase of vacancy-type defects in the oxide films. It was found that the concentration of such defects remained unchanged after vacuum annealing for all films studied, but after H 2 annealing more than doubled for 150 nm-thick films, and increased by an order of magnitude for 100 nm-thick films. The nature of the vacancies was examined further by measuring high-precision annihilation lines and comparing them with a reference Si spectrum. The changes observed in the ratio spectra associated with oxygen electrons suggest that the defects are oxygen vacancies, which have been shown to enhance electroluminescence from TiO 2/p +-Si heterostructure-based devices.

    Details

    Item Type Articles
    CreatorsColeman, P. G., Edwardson, C. J., Zhang, A., Ma, X., Pi, X. and Yang, D.
    DOI10.1016/j.mseb.2012.02.023
    DepartmentsFaculty of Science > Physics
    Publisher StatementColeman_MSEB_2012_177_8_625.pdf: NOTICE: this is the author’s version of a work that was accepted for publication in Materials Science and Engineering: B. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Materials Science and Engineering: B, vol 177, issue 8, 2012, DOI 10.1016/j.mseb.2012.02.023; Coleman_MSEB_2012_177_8_625.doc: NOTICE: this is the author’s version of a work that was accepted for publication in Materials Science and Engineering: B. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Materials Science and Engineering: B, vol 177, issue 8, 2012, DOI 10.1016/j.mseb.2012.02.023
    RefereedYes
    StatusPublished
    ID Code29281

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