Fabrication and properties of etched GaN nanorods
Shields, P., Hugues, M., Zúñiga-Pérez, J., Cooke, M., Dineen, M., Wang, W., Causa, F. and Allsopp, D., 2012. Fabrication and properties of etched GaN nanorods. Physica Status Solidi (C) Current Topics in Solid State Physics, 9 (3-4), pp. 631-634.
Related documents:This repository does not currently have the full-text of this item.
You may be able to access a copy if URLs are provided below. (Contact Author)
Gallium nitride nanorod arrays have been created via dry etching in Cl2/Ar plasma using a Ni mask formed by nanoimprint lithography and lift-off. Aspect ratios greater than 20 are demonstrated by optimizing the etch conditions to achieve near-vertical sidewalls. Such top-down etched nanorod arrays have greater uniformity when compared to bottom-up arrays, with the process already having been demonstrated on 4-inch wafers.
|Creators||Shields, P., Hugues, M., Zúñiga-Pérez, J., Cooke, M., Dineen, M., Wang, W., Causa, F. and Allsopp, D.|
|Departments||Faculty of Engineering & Design > Electronic & Electrical Engineering|
|Research Centres||Centre for Advanced Sensor Technologies (CAST)|
Actions (login required)