Fabrication and properties of etched GaN nanorods
Reference:
Shields, P., Hugues, M., Zúñiga-Pérez, J., Cooke, M., Dineen, M., Wang, W., Causa, F. and Allsopp, D., 2012. Fabrication and properties of etched GaN nanorods. Physica Status Solidi (C) Current Topics in Solid State Physics, 9 (3-4), pp. 631-634.
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Official URL:
http://dx.doi.org/10.1002/pssc.201100394
Abstract
Gallium nitride nanorod arrays have been created via dry etching in Cl2/Ar plasma using a Ni mask formed by nanoimprint lithography and lift-off. Aspect ratios greater than 20 are demonstrated by optimizing the etch conditions to achieve near-vertical sidewalls. Such top-down etched nanorod arrays have greater uniformity when compared to bottom-up arrays, with the process already having been demonstrated on 4-inch wafers.
Details
| Item Type | Articles |
| Creators | Shields, P., Hugues, M., Zúñiga-Pérez, J., Cooke, M., Dineen, M., Wang, W., Causa, F. and Allsopp, D. |
| DOI | 10.1002/pssc.201100394 |
| Departments | Faculty of Engineering & Design > Electronic & Electrical Engineering |
| Research Centres | Centre for Advanced Sensor Technologies (CAST) |
| Refereed | Yes |
| Status | Published |
| ID Code | 29471 |
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