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Formation of Cu3BiS3 thin films via sulfurization of Bi-Cu metal precursors


Reference:

Colombara, D., Peter, L. M., Hutchings, K., Rogers, K. D., Schäfer, S., Dufton, J. T. R. and Islam, M. S., 2012. Formation of Cu3BiS3 thin films via sulfurization of Bi-Cu metal precursors. Thin Solid Films, 520 (16), pp. 5165-5171.

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    Official URL:

    http://dx.doi.org/10.1016/j.tsf.2012.04.003

    Abstract

    Thin films of Cu 3BiS 3 have been produced by conversion of stacked and co-electroplated Bi-Cu metal precursors in the presence of elemental sulfur vapor. The roles of sulfurization temperature and heating rate in achieving single-phase good quality layers have been explored. The potential loss of Bi during the treatments has been investigated, and no appreciable compositional difference was found between films sulfurized at 550 °C for up to 16 h. The structural, morphological and photoelectrochemical properties of the layers were investigated in order to evaluate the potentials of the compound for application in thin film photovoltaics.

    Details

    Item Type Articles
    CreatorsColombara, D., Peter, L. M., Hutchings, K., Rogers, K. D., Schäfer, S., Dufton, J. T. R. and Islam, M. S.
    DOI10.1016/j.tsf.2012.04.003
    DepartmentsFaculty of Science > Chemistry
    Publisher StatementColombara_ThinSolidFilms_2012.pdf: NOTICE: this is the author’s version of a work that was accepted for publication in Thin Solid Films. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Thin Solid Films, 2012, vol 520, issue 16, DOI 10.1016/j.tsf.2012.04.003
    RefereedYes
    StatusPublished
    ID Code29637

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