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Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers


Reference:

Hodges, C., Killat, N., Kaun, S. W., Wong, M. H., Gao, F., Palacios, T., Mishra, U. K., Speck, J. S., Wolverson, D. and Kuball, M., 2012. Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers. Applied Physics Letters, 100 (11), 112106.

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    Official URL:

    http://dx.doi.org/10.1063/1.3693427

    Abstract

    Degradation mechanisms in AlGaN/GaN high electron mobility transistors have been studied under pinch-off conditions. Sites of localized emission of electroluminescence (EL) in the form of hotspots, known to be related to gate leakage currents, are shown to be the result of the generation of non-radiative recombination centers in the AlGaN device layer during device stress. EL from the hotspot site contains both hot-carrier emission from the acceleration of charge carriers in the device channel and defect-related transitions. Gate leakage through the generated centers is the most likely mechanism for the observation of EL hotspots.

    Details

    Item Type Articles
    CreatorsHodges, C., Killat, N., Kaun, S. W., Wong, M. H., Gao, F., Palacios, T., Mishra, U. K., Speck, J. S., Wolverson, D. and Kuball, M.
    DOI10.1063/1.3693427
    DepartmentsFaculty of Science > Physics
    Publisher StatementWolverson_APL_2012_100_112106.pdf: Copyright (2012) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Hodges, C., Killat, N., Kaun, S. W., Wong, M. H., Gao, F., Palacios, T., Mishra, U. K., Speck, J. S., Wolverson, D. and Kuball, M., 2012. Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers. Applied Physics Letters, 100 (11), 112106, and may be found at http://dx.doi.org/10.1063/1.3693427
    RefereedYes
    StatusPublished
    ID Code29685

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