Zeeman splittings of the 5D 0- 7F 2 transitions of Eu 3+ ions implanted into GaN
Kachkanov, V., O'Donnell, K. P., Rice, C., Wolverson, D., Martin, R. W., Lorenz, K., Alves, E. and Bockowski, M., 2011. Zeeman splittings of the 5D 0- 7F 2 transitions of Eu 3+ ions implanted into GaN. Materials Research Society Symposium Proceedings, 1290, pp. 28-32.
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We report the magnetic field splittings of emission lines assigned to the 5D 0- 7F 2 transitions of Eu centres in GaN. The application of a magnetic field in the c-axis direction (B∥c) leads to a splitting of the major lines at 621 nm, 622 nm and 622.8 nm into two components. The Zeeman splitting is linear with magnetic field up to 5 Tesla for each line. In contrast, a magnetic field applied in the growth plane (B⊥c) does not influence the photoluminescence spectra. The estimated g-factors vary slightly from sample to sample with mean values of g ∥ ∼2.8, ∼1.5 and ∼2.0 for the emission lines at 621 nm, 622 nm and 622.8 nm respectively. © 2011 Materials Research Society.
|Creators||Kachkanov, V., O'Donnell, K. P., Rice, C., Wolverson, D., Martin, R. W., Lorenz, K., Alves, E. and Bockowski, M.|
|Departments||Faculty of Science > Physics|
|Additional Information||2010 MRS Fall Meeting; Boston, MA; 29 November - 3 December 2010.|
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