Research

Influence of guided mode absorption on the effectiveness of GaN-on-sapphire photonic crystal light-emitting diodes


Reference:

Shields, P.A., Lis, S., Lee, T., Allsopp, D.W.E., Charlton, M.D.B., Zoorob, M.E. and Wang, W.N., 2009. Influence of guided mode absorption on the effectiveness of GaN-on-sapphire photonic crystal light-emitting diodes. In: Conference on Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference, 2009-06-02 - 2009-06-03, Baltimore, M.D..

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    Abstract

    Enhanced light extraction from photonic crystal light-emitting diodes etched into the device surface is described. Finite difference time domain modeling indicates that scattering or absorption at the substrate-epilayer interface is the dominant limiting process.

    Details

    Item Type Conference or Workshop Items (Other)
    CreatorsShields, P.A., Lis, S., Lee, T., Allsopp, D.W.E., Charlton, M.D.B., Zoorob, M.E. and Wang, W.N.
    DepartmentsFaculty of Engineering & Design > Electronic & Electrical Engineering
    Publisher StatementShields_PCLEDs.pdf: © 2009 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works
    RefereedNo
    StatusPublished
    ID Code30607

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