Photoluminescence and Electroluminescence in InGaN/GaN Nano-Rod Array LEDs Fabricated on a Wafer Scale
Reference:
Shields, P. A., Chan, C., Read, N., Allsopp, D. W. and Taylor, R. A., 2010. Photoluminescence and Electroluminescence in InGaN/GaN Nano-Rod Array LEDs Fabricated on a Wafer Scale. In: Solid-State and Organic Lighting (SOLED), 2010-06-21, Karlsruhe.
Related documents:
This repository does not currently have the full-text of this item.You may be able to access a copy if URLs are provided below. (Contact Author)
Abstract
The fabrication of nano-rods containing InGaN/GaN quantum wells with diameter and the evolution of their optical properties are reported. A prototype nano-rod array LED device with strong photonic crystal effects in its electroluminescence is demonstrated.
Details
| Item Type | Conference or Workshop Items (Paper) |
| Creators | Shields, P. A., Chan, C., Read, N., Allsopp, D. W. and Taylor, R. A. |
| Departments | Faculty of Engineering & Design > Electronic & Electrical Engineering |
| Refereed | No |
| Status | Published |
| ID Code | 30609 |
Export
Actions (login required)
| View Item |
