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Photoluminescence and Electroluminescence in InGaN/GaN Nano-Rod Array LEDs Fabricated on a Wafer Scale


Reference:

Shields, P. A., Chan, C., Read, N., Allsopp, D. W. and Taylor, R. A., 2010. Photoluminescence and Electroluminescence in InGaN/GaN Nano-Rod Array LEDs Fabricated on a Wafer Scale. In: Solid-State and Organic Lighting (SOLED), 2010-06-21, Karlsruhe.

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Abstract

The fabrication of nano-rods containing InGaN/GaN quantum wells with diameter and the evolution of their optical properties are reported. A prototype nano-rod array LED device with strong photonic crystal effects in its electroluminescence is demonstrated.

Details

Item Type Conference or Workshop Items (Paper)
CreatorsShields, P. A., Chan, C., Read, N., Allsopp, D. W. and Taylor, R. A.
DepartmentsFaculty of Engineering & Design > Electronic & Electrical Engineering
RefereedNo
StatusPublished
ID Code30609

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