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Mid-infrared electroluminescence from coupled quantum dots and wells


Reference:

Shields, P.A., Bumby, C.W., Li, L.J. and Nicholas, R.J., 2004. Mid-infrared electroluminescence from coupled quantum dots and wells. Journal of Applied Physics, 96 (5), pp. 2725-2730.

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Official URL:

http://dx.doi.org/10.1063/1.1776623

Abstract

The room temperature electroluminescence (EL) between 1.7-2.6 μ from coupled quantum dots and quantum wells in the InAs/InSb/GaSb materials system was investigated. The samples which were investigated consisted of a single narrow InAs quantum well grown below a layer of InSb quantum dots in a GaSb matrix. It was found that the thickness of the GaSb space layer lowers the energy from that of a quantum well alone. The results reveal the occurrence of a sharp transition after a single monolayer coverage of GaSb either due to structural changes in the quantum dots or from the shrinkage of the quantum well.

Details

Item Type Articles
CreatorsShields, P.A., Bumby, C.W., Li, L.J. and Nicholas, R.J.
DOI10.1063/1.1776623
DepartmentsFaculty of Engineering & Design > Electronic & Electrical Engineering
RefereedYes
StatusPublished
ID Code30615

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