Structure of GaSb layers grown on (111) GaAs surfaces

Reference:

Babkevich, A.Y., Cowley, R.A., Mason, N.J., Shields, P.A., Stadelman, T., Brown, S., Mannix, D. and Paul, D., 2004. Structure of GaSb layers grown on (111) GaAs surfaces. Journal of Applied Physics, 96 (5), pp. 3012-3019.

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Official URL:

http://dx.doi.org/10.1063/1.1778476

Abstract

The structure of GaSb layers grown on (111) GaAs substrate were studied using x-ray diffraction. The GaSb layers were grown by metal-organic vapor phase epitaxy, with thicknesses of 70 Å, 160 Å and 1260 Å. The lattice mismatch between the layer and the substrate was large and most of the misfit strain was taken up by a regular network of dislocations localized at the interfaces between GaSb and GaAs. The result shows that the structure of GaAs substrate was a single fcc domain.

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