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Far-infrared modulated photoluminescence spectroscopy of InSb/GaSb quantum dot structures


Reference:

Child, R.A., Nicholas, R.J., Mason, N.J., Shields, P.A., Wells, J.-P.R., Bradley, I.V., Phillips, J. and Murdin, B.N., 2003. Far-infrared modulated photoluminescence spectroscopy of InSb/GaSb quantum dot structures. Physical Review B, 68 (16), pp. 1653071-1653075.

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Official URL:

http://dx.doi.org/10.1103/PhysRevB.68.165307

Abstract

The first far-infrared modulated photoluminescence (FIRM-PL) measurements in InSb/GaSb quantum dots have been performed. Far-infrared absorption is found to both enhance and suppress the quantum dot PL depending on the FIR intensity. This behavior is attributed to the nonthermal distribution of carriers amongst the quantum dots. The spectral dependence of the FIRM-PL signal measures the energy spectrum of the quantum dots, showing a peak at 14.5 meV corresponding to transitions between the first two energy levels of the dot distribution.

Details

Item Type Articles
CreatorsChild, R.A., Nicholas, R.J., Mason, N.J., Shields, P.A., Wells, J.-P.R., Bradley, I.V., Phillips, J. and Murdin, B.N.
DOI10.1103/PhysRevB.68.165307
DepartmentsFaculty of Engineering & Design > Electronic & Electrical Engineering
RefereedYes
StatusPublished
ID Code30620

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