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An investigation of GaSb/GaAs thermophotovoltaic cells


Reference:

Fan, Q., Lim, A.L.C., Conibeer, G.J., Bumby, C.W., Shields, P.A., Nicholas, R.J. and Haywood, S.K., 2002. An investigation of GaSb/GaAs thermophotovoltaic cells. In: 29th IEEE Photovoltaic Specialists Conference, 2002-05-18 - 2002-05-23, New Orleans.

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Abstract

The effect of growth conditions on the electrical and optical properties of p-GaSb/n-GaAs junctions grown by MOVPE has been studied. Low growth temperature (540°C), HCl treatment of the GaAs substrate prior to growth and addition of a 100nm InAs passivation layer were all found to increase the short circuit current (I sc) under illumination and also the spectral response from the GaSb layer. An undoped GaAs buffer increased the open circuit V oc and improved the diode rectification but at the expense of photocurrent from the GaSb layer. Preliminary results suggest that n-doping the GaAs buffer layer may yield both high V oc and high current collection.

Details

Item Type Conference or Workshop Items (Other)
CreatorsFan, Q., Lim, A.L.C., Conibeer, G.J., Bumby, C.W., Shields, P.A., Nicholas, R.J. and Haywood, S.K.
DepartmentsFaculty of Engineering & Design > Electronic & Electrical Engineering
RefereedNo
StatusPublished
ID Code30621

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