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Free-carrier effects in gallium nitride epilayers: Valence-band dispersion


Reference:

Shields, P.A., Nicholas, R.J., Peeters, F.M., Beaumont, B. and Gibart, P., 2001. Free-carrier effects in gallium nitride epilayers: Valence-band dispersion. Physical Review B, 64 (8), 81203.

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Official URL:

http://dx.doi.org/10.1103/PhysRevB.64.081203

Abstract

The dispersion of the A-valence-band in GaN has been deduced from the observation of high-index magnetoexcitonic states in polarized interband magnetoreflectivity and is found to be strongly nonparabolic with a mass in the range 1.2-1.8me. It matches the theory of Kim et al. [Phys. Rev. B 56, 7363 (1997)] extremely well, which also gives a strong k-dependent A-valence-band mass. A strong phonon coupling leads to quenching of the observed transitions at about an LO-phonon energy above the band gap and a strong nonparabolicity. The valence band was deduced from subtracting from the reduced dispersion the electron contribution with a model that includes a full treatment of the electron-phonon interaction.

Details

Item Type Articles
CreatorsShields, P.A., Nicholas, R.J., Peeters, F.M., Beaumont, B. and Gibart, P.
DOI10.1103/PhysRevB.64.081203
DepartmentsFaculty of Engineering & Design > Electronic & Electrical Engineering
RefereedYes
StatusPublished
ID Code30624

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